Suspending resonant photonic device based on silicon substrate nitride material and preparation method for same

基于硅衬底氮化物材料的悬空谐振光子器件及其制备方法

Abstract

The invention discloses a suspending resonant photonic device based on a silicon substrate nitride material and a preparation method for the same. The photonic device realizes a wafer with a silicon substrate III nitride serving as a carrier, and comprises a silicon substrate layer and a top nitride device layer arranged on the silicon substrate layer, wherein the silicon substrate layer is provided with a cubic cavity penetrating through the lower surface of the top nitride device layer, and the top nitride device layer is positioned in a suspending portion on the upper portion of the cavity and has a nano photonic device structure. By the aid of the suspending resonant photonic device based on the silicon substrate nitride material and the preparation method for the same, interaction of optical waves and the suspending photonic device can be realized, integration of the preparation method and the silicon microelectronic technology is facilitated, and silicon-based photo-electronic devices are implemented.
本发明公开了一种基于硅衬底氮化物的悬空谐振光子器件及其制备方法,实现载体为硅衬底III族氮化物晶片,包括硅衬底层,以及设置在硅衬底层上的顶层氮化物器件层,所述硅衬底层具有一个贯穿至顶层氮化物层下表面的长方体空腔;所述顶层氮化物器件层位于空腔上部的悬空部分具有纳米光子器件结构。本发明还公开了一种基于硅衬底氮化物的悬空谐振光子器件的制备方法。本发明所设计的一种基于硅衬底氮化物的悬空谐振光子器件及其制备方法能够实现光波与悬空光子器件交互作用的基于硅衬底氮化物材料的悬空谐振光子器件以及便于与硅微电子技术集成,实现集成硅基光电子器件。

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