具有双晶体管设计的参考电压发生器

Reference voltage generator having a two transistor design

Abstract

本发明提供了一种改进的电压参考发生器。所述电压参考发生器包括:第一晶体管,其具有被偏置成使所述第一晶体管处于弱反模式的栅极;以及第二晶体管,其与所述第一晶体管串联连接并具有被偏置成使所述第二晶体管处于弱反模式的栅极,其中,所述第一晶体管的阈值电压小于所述第二晶体管的阈值电压,所述第二晶体管的栅极电耦接至所述第二晶体管的漏极和所述第一晶体管的源极以形成用于参考电压的输出。
An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.

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