Manufacturing technology for removing redundant metal filler of metal layer



The invention provides a manufacturing technology for removing a redundant metal filler of a metal layer. The technology comprises the following steps of: 1) depositing a low k value dielectric layer; 2) forming a hard mask layer on the deposited low k value dielectric layer; 3) photoetching and etching the hard mask layer; 4) filling a lead metal and a redundant metal to complete deposition of a metal layer; 5) performing chemical mechanical grinding on the metal layer; and 6) continuously performing chemical mechanical grinding on the low k value dielectric layer and the metal mixed layer to further remove the redundant metal. By a process of further removing the redundant metal by using chemical mechanical grinding in interconnection of single Damascus and double Damascus metals in the method, coupling capacitance introduced by the redundant metal filler in the metal layers and between the metal layers can be effectively reduced or eliminated, so the method is very suitable for application.




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Patent Citations (5)

    Publication numberPublication dateAssigneeTitle
    CN-101231667-AJuly 30, 2008台湾积体电路制造股份有限公司Method of filling redundancy for semiconductor manufacturing process and semiconductor device
    CN-102117348-AJuly 06, 2011中国科学院微电子研究所Preprocessing method using redundancy metal filling for realizing layout density uniformity
    CN-102130043-AJuly 20, 2011中国科学院微电子研究所Method for filling redundancy metal
    US-6849549-B1February 01, 2005Taiwan Semiconductor Manufacturing Co., LtdMethod for forming dummy structures for improved CMP and reduced capacitance
    US-7470630-B1December 30, 2008Altera CorporationApproach to reduce parasitic capacitance from dummy fill

NO-Patent Citations (0)


Cited By (1)

    Publication numberPublication dateAssigneeTitle
    CN-103258792-AAugust 21, 2013上海华力微电子有限公司Groove-preferential dual-damascene copper-connection method reducing redundant metal coupling capacitance