Manufacturing technology for removing redundant metal filler of metal layer

一种去除金属层冗余金属填充的制造工艺

Abstract

The invention provides a manufacturing technology for removing a redundant metal filler of a metal layer. The technology comprises the following steps of: 1) depositing a low k value dielectric layer; 2) forming a hard mask layer on the deposited low k value dielectric layer; 3) photoetching and etching the hard mask layer; 4) filling a lead metal and a redundant metal to complete deposition of a metal layer; 5) performing chemical mechanical grinding on the metal layer; and 6) continuously performing chemical mechanical grinding on the low k value dielectric layer and the metal mixed layer to further remove the redundant metal. By a process of further removing the redundant metal by using chemical mechanical grinding in interconnection of single Damascus and double Damascus metals in the method, coupling capacitance introduced by the redundant metal filler in the metal layers and between the metal layers can be effectively reduced or eliminated, so the method is very suitable for application.
本发明提供一种去除金属层冗余金属填充的制造工艺。其工艺步骤如下:1)沉积低k值介质层;2)在沉积的低k值介质层上形成硬掩模层;3)对硬掩模层进行光刻和刻蚀;4)进行导线金属和冗余金属的填充,完成金属层沉积;5)对金属层进行化学机械研磨;6)继续化学机械研磨低k值介质层和金属混合层,进一步去除冗余金属。本方法通过一种在制作单大马士革和双大马士革金属互连中利用化学机械研磨进一步去除冗余金属的工艺,可以有效地减少或消除冗余金属填充引入的金属层内和金属层间的耦合电容,非常适于实用。

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Cited By (1)

    Publication numberPublication dateAssigneeTitle
    CN-103258792-AAugust 21, 2013上海华力微电子有限公司Groove-preferential dual-damascene copper-connection method reducing redundant metal coupling capacitance