Film transistor and its manufacturing method

薄膜晶体管及其制造方法

Abstract

The invention provides a film transistor and its manufacturing method. The manufacturing method comprises the steps of forming a grid on a substrate. A grid insulating layer is formed on the substrate for covering the grid. A semiconductor material layer is formed on the grid insulating layer. An etching termination material layer is formed on the semiconductor material layer above the grid. The etching termination material layer is provided with a first block and a second block arranged on the two sides of the first block. The thickness of the first block is greater than the thickness of the second block. The etching termination material layer comprises organic / inorganic hybrid material. The etching termination material layer is adopted as the masking and part of the semiconductor material layer is removed so as to form a channel layer. The second block of the etching termination material layer is removed so as to form an etching termination layer. The etching termination layer covers part of the channel layer. The part of the channel layer covered with the etching termination layer is formed with a source electrode and a drain electrode.
薄膜晶体管及薄膜晶体管的制造方法。该制造方法包括:于一基板上形成一栅极。于基板上形成一栅极绝缘层,以覆盖栅极。于栅极绝缘层上形成一半导体材料层。形成一蚀刻终止材料层于栅极上方的半导体材料层上,其中蚀刻终止材料层具有一第一区块与位于第一区块两侧的一第二区块,第一区块的厚度大于第二区块的厚度,且蚀刻终止材料层包括一有机无机混合材料。以蚀刻终止材料层为掩模,移除部分半导体材料层,以形成一沟道层。移除蚀刻终止材料层的第二区块,以形成一蚀刻终止层,蚀刻终止层覆盖部分沟道层。于覆盖有蚀刻终止层的沟道层上形成一源极与一漏极。本发明可以降低制作成本与时间以及提升元件特性。

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Cited By (2)

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    CN-105555822-AMay 04, 2016破立纪元有限公司Photopatternable materials and related electronic devices and methods
    WO-2017054407-A1April 06, 2017京东方科技集团股份有限公司Transistor à couches minces, substrat de matrice et procédé de fabrication associé, et dispositif d'affichage